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Patent Browser Decade Milestones Method and means for coupling high-fr...
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Method and means for coupling high-frequency energy to an...

2015 18 Figs Electronics ...

A method for coupling high-frequency energy, in particular for microwave circuits, to a nanoscale junction involves p...

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A method for coupling high-frequency energy, in particular for microwave circuits, to a nanoscale junction involves placing a bias-T outside of the tip and sample circuits of a scanning probe microscope and connecting a portion of a sample of anal...

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Patent ID: US-9075081-B2
Publication Date: July 2015
Category: Electronics & Technology
Inventors:
Assignee:
Classification:
Title:
Method and means for coupling high-frequency energy to and/or from the nanoscale junction of an electrically-conductive tip with a semiconductor
Abstract:
A method for coupling high-frequency energy, in particular for microwave circuits, to a nanoscale junction involves placing a bias-T outside of the tip and sample circuits of a scanning probe microscope and connecting a portion of a sample of analyzed semi-conductor through an outer shielding layer of coaxial cable so as to complete a circuit with minimal involvement of the sample. The bias-T branches into high and low-frequency circuits, both of which are completed and, at least the high-freq...

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